SIRA24DP-T1-GE3 Priser (USD) [225842stk Lager]
- 1 pcs$0.16378
- 3,000 pcs$0.15379
- Delnummer:
- SIRA24DP-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 25V 60A POWERPAKSO-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - moduler, Tyristorer - TRIAC, Dioder - likerettere - matriser, Transistorer - FET, MOSFET - RF, Dioder - Zener - Singel, Power Driver-moduler and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIRA24DP-T1-GE3 electronic components. SIRA24DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA24DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA24DP-T1-GE3 Produktegenskaper
Delnummer :
SIRA24DP-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 25V 60A POWERPAKSO-8
Serie :
TrenchFET® Gen IV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.4 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (maks) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
2650pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
62.5W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® SO-8
Pakke / sak :
PowerPAK® SO-8
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