IPD30N03S4L09ATMA1 Priser (USD) [272593stk Lager]
- 1 pcs$0.13569
- Delnummer:
- IPD30N03S4L09ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 30A TO252-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Singel and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD30N03S4L09ATMA1 electronic components. IPD30N03S4L09ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD30N03S4L09ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD30N03S4L09ATMA1 Produktegenskaper
Delnummer :
IPD30N03S4L09ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 30A TO252-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 13µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1520pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
42W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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