Diodes Incorporated - DMN10H120SFG-7

KEY Part #: K6402038

DMN10H120SFG-7 Priser (USD) [320618stk Lager]

1 pcs$0.11536

Delnummer:: DMN10H120SFG-7

Produsent:: Diodes Incorporated

Detaljert beskrivelse:: MOSFET N-CH 100V 3.8A POWERDI.

Manufacturer's standard lead time:: På lager

Holdbarhet:: Ett år

Brikke fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåte:

Familiekategorier:: KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - RF, Tyristorer - SCR-er - moduler, Transistorer - spesialformål, Tyristorer - DIAC, SIDAC and Dioder - RF ...

Konkurransefordel:: We specialize in Diodes Incorporated DMN10H120SFG-7 electronic components. DMN10H120SFG-7 can be shipped within 24 hours after order. If you have any demands for DMN10H120SFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

DMN10H120SFG-7 Produktegenskaper

Delnummer : DMN10H120SFG-7

Produsent : Diodes Incorporated

Beskrivelse : MOSFET N-CH 100V 3.8A POWERDI

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 110 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 10.6nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 549pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 1W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerDI3333-8

Pakke / sak : 8-PowerVDFN

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