Vishay Semiconductor Diodes Division - S1JHE3_A/I

KEY Part #: K6455017

S1JHE3_A/I Priser (USD) [1218837stk Lager]

  • 1 pcs$0.03035
  • 7,500 pcs$0.02825
  • 15,000 pcs$0.02511
  • 37,500 pcs$0.02354
  • 52,500 pcs$0.02093

Delnummer:
S1JHE3_A/I
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 1A 600V 40A@8.3ms Single Die Auto
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, Dioder - Zener - Arrays, Power Driver-moduler, Dioder - RF, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - RF and Dioder - likerettere - singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division S1JHE3_A/I electronic components. S1JHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1JHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1JHE3_A/I Produktegenskaper

Delnummer : S1JHE3_A/I
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 1A DO214AC
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 1A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 1.8µs
Nåværende - Omvendt lekkasje @ Vr : 1µA @ 600V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-214AC, SMA
Leverandørenhetspakke : DO-214AC (SMA)
Driftstemperatur - veikryss : -55°C ~ 150°C

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