IPN50R2K0CEATMA1 Priser (USD) [522320stk Lager]
- 1 pcs$0.07081
- 3,000 pcs$0.05886
- Delnummer:
- IPN50R2K0CEATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- CONSUMER.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - En, Tyristorer - TRIAC, Power Driver-moduler and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPN50R2K0CEATMA1 electronic components. IPN50R2K0CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN50R2K0CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN50R2K0CEATMA1 Produktegenskaper
Delnummer :
IPN50R2K0CEATMA1
Produsent :
Infineon Technologies
Beskrivelse :
CONSUMER
Serie :
CoolMOS™ CE
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, vgs :
2 Ohm @ 600mA, 13V
Vgs (th) (Max) @ Id :
3.5V @ 50µA
Gate Lading (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
124pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
5W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-SOT223
Pakke / sak :
SOT-223-3
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