STL3N10F7 Priser (USD) [96764stk Lager]
- 1 pcs$0.40409
- 3,000 pcs$0.33888
- Delnummer:
- STL3N10F7
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 100V 4A POWERFLAT22.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Dioder - RF and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in STMicroelectronics STL3N10F7 electronic components. STL3N10F7 can be shipped within 24 hours after order. If you have any demands for STL3N10F7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL3N10F7 Produktegenskaper
Delnummer :
STL3N10F7
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 100V 4A POWERFLAT22
Serie :
DeepGATE™, STripFET™ VII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
70 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
7.8nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
408pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.4W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerFlat™ (2x2)
Pakke / sak :
6-PowerWDFN
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