SIHF6N65E-GE3 Priser (USD) [33761stk Lager]
- 1 pcs$1.18548
- 10 pcs$1.01724
- 100 pcs$0.81751
- 500 pcs$0.63583
- 1,000 pcs$0.52683
- Delnummer:
- SIHF6N65E-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 650V 6A TO220FP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - JFET-er, Transistorer - IGBT-er - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - DIAC, SIDAC, Transistorer - FET, MOSFET - Arrays, Tyristorer - TRIAC and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHF6N65E-GE3 electronic components. SIHF6N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHF6N65E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHF6N65E-GE3 Produktegenskaper
Delnummer :
SIHF6N65E-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 650V 6A TO220FP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
820pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
31W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220 Full Pack
Pakke / sak :
TO-220-3 Full Pack
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