IXFH50N85X Priser (USD) [7754stk Lager]
- 1 pcs$5.84368
- 10 pcs$5.31308
- 100 pcs$4.51612
- 500 pcs$3.85198
- Delnummer:
- IXFH50N85X
- Produsent:
- IXYS
- Detaljert beskrivelse:
- 850V/50A ULTRA JUNCTION X-CLASS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - SCR, Dioder - likerettere - singel, Dioder - Zener - Arrays, Transistorer - IGBT-er - singel and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFH50N85X electronic components. IXFH50N85X can be shipped within 24 hours after order. If you have any demands for IXFH50N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH50N85X Produktegenskaper
Delnummer :
IXFH50N85X
Produsent :
IXYS
Beskrivelse :
850V/50A ULTRA JUNCTION X-CLASS
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
850V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
105 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 4mA
Gate Lading (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4480pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
890W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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