IPT111N20NFDATMA1 Priser (USD) [22406stk Lager]
- 1 pcs$1.83937
- 2,000 pcs$1.68749
- Delnummer:
- IPT111N20NFDATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 96A HSOF-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - RF, Power Driver-moduler and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPT111N20NFDATMA1 electronic components. IPT111N20NFDATMA1 can be shipped within 24 hours after order. If you have any demands for IPT111N20NFDATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT111N20NFDATMA1 Produktegenskaper
Delnummer :
IPT111N20NFDATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 96A HSOF-8
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
11.1 mOhm @ 96A, 10V
Vgs (th) (Max) @ Id :
4V @ 267µA
Gate Lading (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
375W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-HSOF-8-1
Pakke / sak :
8-PowerSFN
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