TK9A55DA(STA4,Q,M) Priser (USD) [57375stk Lager]
- 1 pcs$0.75340
- 50 pcs$0.74965
- Delnummer:
- TK9A55DA(STA4,Q,M)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 550V 8.5A TO-220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - RF, Transistorer - spesialformål, Transistorer - IGBT-er - moduler and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK9A55DA(STA4,Q,M) electronic components. TK9A55DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK9A55DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9A55DA(STA4,Q,M) Produktegenskaper
Delnummer :
TK9A55DA(STA4,Q,M)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 550V 8.5A TO-220SIS
Serie :
π-MOSVII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
550V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
860 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
40W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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