FDB070AN06A0 Priser (USD) [75776stk Lager]
- 1 pcs$0.51858
- 800 pcs$0.51600
- Delnummer:
- FDB070AN06A0
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 60V 80A TO-263AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - DIAC, SIDAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - TRIAC, Dioder - Zener - Arrays, Transistorer - JFET-er and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in ON Semiconductor FDB070AN06A0 electronic components. FDB070AN06A0 can be shipped within 24 hours after order. If you have any demands for FDB070AN06A0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB070AN06A0 Produktegenskaper
Delnummer :
FDB070AN06A0
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 60V 80A TO-263AB
Serie :
PowerTrench®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
175W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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