TK58E06N1,S1X Priser (USD) [69791stk Lager]
- 1 pcs$0.61879
- 50 pcs$0.49453
- 100 pcs$0.43269
- 500 pcs$0.31741
- 1,000 pcs$0.25059
- Delnummer:
- TK58E06N1,S1X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 60V 58A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Power Driver-moduler, Transistorer - programmerbar enhet and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK58E06N1,S1X electronic components. TK58E06N1,S1X can be shipped within 24 hours after order. If you have any demands for TK58E06N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK58E06N1,S1X Produktegenskaper
Delnummer :
TK58E06N1,S1X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 60V 58A TO-220
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
58A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.4 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220
Pakke / sak :
TO-220-3
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