SI5515CDC-T1-GE3 Priser (USD) [262736stk Lager]
- 1 pcs$0.14078
- 3,000 pcs$0.13247
- Delnummer:
- SI5515CDC-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N/P-CH 20V 4A 1206-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - programmerbar enhet, Power Driver-moduler, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - RF and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI5515CDC-T1-GE3 electronic components. SI5515CDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5515CDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5515CDC-T1-GE3 Produktegenskaper
Delnummer :
SI5515CDC-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 20V 4A 1206-8
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N and P-Channel
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, vgs :
36 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
632pF @ 10V
Kraft - Maks :
3.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SMD, Flat Lead
Leverandørenhetspakke :
1206-8 ChipFET™
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