SQ1922EEH-T1_GE3 Priser (USD) [485597stk Lager]
- 1 pcs$0.07617
- Delnummer:
- SQ1922EEH-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2N-CH 20V SC70-6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En, Dioder - Zener - Singel and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQ1922EEH-T1_GE3 electronic components. SQ1922EEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1922EEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1922EEH-T1_GE3 Produktegenskaper
Delnummer :
SQ1922EEH-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2N-CH 20V SC70-6
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
840mA (Tc)
Rds On (Max) @ Id, vgs :
350 mOhm @ 400mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 10V
Kraft - Maks :
1.5W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
6-TSSOP, SC-88, SOT-363
Leverandørenhetspakke :
SC-70-6
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