IRFSL3206PBF Priser (USD) [61312stk Lager]
- 1 pcs$1.06081
- 50 pcs$1.05554
- Delnummer:
- IRFSL3206PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 120A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Singel and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFSL3206PBF electronic components. IRFSL3206PBF can be shipped within 24 hours after order. If you have any demands for IRFSL3206PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL3206PBF Produktegenskaper
Delnummer :
IRFSL3206PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 120A TO-262
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
3 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6540pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-262
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
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