FQT1N80TF-WS Priser (USD) [201151stk Lager]
- 1 pcs$0.18388
- Delnummer:
- FQT1N80TF-WS
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 800V 0.2A SOT-223.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Tyristorer - SCR, Power Driver-moduler, Dioder - Zener - Singel, Transistorer - FET, MOSFET - Arrays, Tyristorer - DIAC, SIDAC, Tyristorer - TRIAC and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQT1N80TF-WS electronic components. FQT1N80TF-WS can be shipped within 24 hours after order. If you have any demands for FQT1N80TF-WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQT1N80TF-WS Produktegenskaper
Delnummer :
FQT1N80TF-WS
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 800V 0.2A SOT-223
Serie :
QFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
20 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
195pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-223-3
Pakke / sak :
TO-261-3
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