TK9P65W,RQ Priser (USD) [118862stk Lager]
- 1 pcs$0.31118
- 2,000 pcs$0.30893
- Delnummer:
- TK9P65W,RQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 9.3A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - SCR, Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - RF, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK9P65W,RQ electronic components. TK9P65W,RQ can be shipped within 24 hours after order. If you have any demands for TK9P65W,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9P65W,RQ Produktegenskaper
Delnummer :
TK9P65W,RQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 9.3A DPAK
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
560 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 350µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
80W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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