Toshiba Semiconductor and Storage - TK10V60W,LVQ

KEY Part #: K6418370

TK10V60W,LVQ Priser (USD) [60727stk Lager]

  • 1 pcs$0.67621
  • 2,500 pcs$0.67285

Delnummer:
TK10V60W,LVQ
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
MOSFET N-CH 600V 9.7A 5DFN.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - JFET-er, Transistorer - programmerbar enhet, Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - likerettere - matriser and Transistorer - IGBT-er - moduler ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage TK10V60W,LVQ electronic components. TK10V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK10V60W,LVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK10V60W,LVQ Produktegenskaper

Delnummer : TK10V60W,LVQ
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : MOSFET N-CH 600V 9.7A 5DFN
Serie : DTMOSIV
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 500µA
Gate Lading (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 300V
FET-funksjon : Super Junction
Effektdissipasjon (maks) : 88.3W (Tc)
Driftstemperatur : 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : 4-DFN-EP (8x8)
Pakke / sak : 4-VSFN Exposed Pad

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