Diodes Incorporated - DDTD113ZC-7-F

KEY Part #: K6528477

DDTD113ZC-7-F Priser (USD) [1557132stk Lager]

  • 1 pcs$0.02375
  • 3,000 pcs$0.02201
  • 6,000 pcs$0.01914
  • 15,000 pcs$0.01627
  • 30,000 pcs$0.01531
  • 75,000 pcs$0.01436
  • 150,000 pcs$0.01244

Delnummer:
DDTD113ZC-7-F
Produsent:
Diodes Incorporated
Detaljert beskrivelse:
TRANS PREBIAS NPN 200MW SOT23-3.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Bridge likerettere, Transistorer - IGBT-er - singel, Tyristorer - SCR-er - moduler, Dioder - Zener - Singel, Dioder - RF, Transistorer - FET, MOSFET - En and Transistorer - IGBT-er - Arrays ...
Konkurransefordel:
We specialize in Diodes Incorporated DDTD113ZC-7-F electronic components. DDTD113ZC-7-F can be shipped within 24 hours after order. If you have any demands for DDTD113ZC-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTD113ZC-7-F Produktegenskaper

Delnummer : DDTD113ZC-7-F
Produsent : Diodes Incorporated
Beskrivelse : TRANS PREBIAS NPN 200MW SOT23-3
Serie : -
Delstatus : Active
Transistortype : NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 500mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 1 kOhms
Motstand - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Nåværende - Collector Cutoff (Max) : 500nA
Frekvens - overgang : 200MHz
Kraft - Maks : 200mW
Monteringstype : Surface Mount
Pakke / sak : TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke : SOT-23-3

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