IPZ40N04S58R4ATMA1 Priser (USD) [295252stk Lager]
- 1 pcs$0.12527
- 5,000 pcs$0.11928
- Delnummer:
- IPZ40N04S58R4ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - RF, Dioder - RF, Dioder - Zener - Arrays and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPZ40N04S58R4ATMA1 electronic components. IPZ40N04S58R4ATMA1 can be shipped within 24 hours after order. If you have any demands for IPZ40N04S58R4ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPZ40N04S58R4ATMA1 Produktegenskaper
Delnummer :
IPZ40N04S58R4ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, vgs :
8.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.4V @ 10µA
Gate Lading (Qg) (Max) @ Vgs :
13.7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
771pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
34W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TSDSON-8-32
Pakke / sak :
8-PowerTDFN
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