IPG20N10S4L35AATMA1 Priser (USD) [182536stk Lager]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Delnummer:
- IPG20N10S4L35AATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Dioder - Zener - Arrays, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - singel, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - SCR and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Produktegenskaper
Delnummer :
IPG20N10S4L35AATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, vgs :
35 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 16µA
Gate Lading (Qg) (Max) @ Vgs :
17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1105pF @ 25V
Kraft - Maks :
43W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-TDSON-8-10
Siste nytt
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