SQJ262EP-T1_GE3 Priser (USD) [158402stk Lager]
- 1 pcs$0.23350
- Delnummer:
- SQJ262EP-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Dioder - likerettere - singel, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQJ262EP-T1_GE3 electronic components. SQJ262EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ262EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ262EP-T1_GE3 Produktegenskaper
Delnummer :
SQJ262EP-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 60V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15A (Tc), 40A (Tc)
Rds On (Max) @ Id, vgs :
35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 25V, 1260pF @ 25V
Kraft - Maks :
27W (Tc), 48W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® SO-8 Dual
Leverandørenhetspakke :
PowerPAK® SO-8 Dual Asymmetric
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