TK12A60U(Q,M) Priser (USD) [26492stk Lager]
- 1 pcs$1.70992
- Delnummer:
- TK12A60U(Q,M)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 600V 12A TO220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - singel, Dioder - Zener - Singel, Dioder - likerettere - matriser and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK12A60U(Q,M) electronic components. TK12A60U(Q,M) can be shipped within 24 hours after order. If you have any demands for TK12A60U(Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12A60U(Q,M) Produktegenskaper
Delnummer :
TK12A60U(Q,M)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 600V 12A TO220SIS
Serie :
DTMOSII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
400 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
720pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
35W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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