IPA80R1K0CEXKSA2 Priser (USD) [54371stk Lager]
- 1 pcs$0.74840
- 10 pcs$0.66143
- 100 pcs$0.52283
- 500 pcs$0.40546
- 1,000 pcs$0.30279
- Delnummer:
- IPA80R1K0CEXKSA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V TO-220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Dioder - RF, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Dioder - Zener - Singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPA80R1K0CEXKSA2 electronic components. IPA80R1K0CEXKSA2 can be shipped within 24 hours after order. If you have any demands for IPA80R1K0CEXKSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA80R1K0CEXKSA2 Produktegenskaper
Delnummer :
IPA80R1K0CEXKSA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V TO-220-3
Serie :
CoolMOS™ CE
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
950 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
785pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
32W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-FP
Pakke / sak :
TO-220-3 Full Pack
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