TK39N60W,S1VF Priser (USD) [8991stk Lager]
- 1 pcs$5.04161
- 30 pcs$4.13406
- 120 pcs$3.73078
- 510 pcs$3.12580
- Delnummer:
- TK39N60W,S1VF
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 38.8A TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR-er - moduler, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - spesialformål, Transistorer - IGBT-er - singel, Tyristorer - SCR and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK39N60W,S1VF electronic components. TK39N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK39N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39N60W,S1VF Produktegenskaper
Delnummer :
TK39N60W,S1VF
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 38.8A TO247
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
270W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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