CSD85312Q3E Priser (USD) [244691stk Lager]
- 1 pcs$0.15525
- 2,500 pcs$0.15448
- Delnummer:
- CSD85312Q3E
- Produsent:
- Texas Instruments
- Detaljert beskrivelse:
- MOSFET 2N-CH 20V 39A 8VSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Dioder - likerettere - singel and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Texas Instruments CSD85312Q3E electronic components. CSD85312Q3E can be shipped within 24 hours after order. If you have any demands for CSD85312Q3E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD85312Q3E Produktegenskaper
Delnummer :
CSD85312Q3E
Produsent :
Texas Instruments
Beskrivelse :
MOSFET 2N-CH 20V 39A 8VSON
Serie :
NexFET™
Delstatus :
Active
FET Type :
2 N-Channel (Dual) Common Source
FET-funksjon :
Logic Level Gate, 5V Drive
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
39A
Rds On (Max) @ Id, vgs :
12.4 mOhm @ 10A, 8V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
2390pF @ 10V
Kraft - Maks :
2.5W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
8-VSON (3.3x3.3)
Siste nytt
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