TPH6400ENH,L1Q Priser (USD) [131756stk Lager]
- 1 pcs$0.28818
- 5,000 pcs$0.28674
- Delnummer:
- TPH6400ENH,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 200V 21A 8-SOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - En, Tyristorer - SCR-er - moduler, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er and Dioder - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPH6400ENH,L1Q electronic components. TPH6400ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH6400ENH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH6400ENH,L1Q Produktegenskaper
Delnummer :
TPH6400ENH,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 200V 21A 8-SOP
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
64 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 300µA
Gate Lading (Qg) (Max) @ Vgs :
11.2nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.6W (Ta), 57W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP Advance (5x5)
Pakke / sak :
8-PowerVDFN
Siste nytt
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