SQ2315ES-T1_GE3 Priser (USD) [431769stk Lager]
- 1 pcs$0.22939
- 10 pcs$0.19340
- 100 pcs$0.14519
- 500 pcs$0.10647
- 1,000 pcs$0.08227
- Delnummer:
- SQ2315ES-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CHAN 12V SOT23.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - singel and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQ2315ES-T1_GE3 electronic components. SQ2315ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2315ES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2315ES-T1_GE3 Produktegenskaper
Delnummer :
SQ2315ES-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CHAN 12V SOT23
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
50 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 4V
FET-funksjon :
-
Effektdissipasjon (maks) :
2W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-23-3 (TO-236)
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
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