IPW65R190CFDAFKSA1 Priser (USD) [23109stk Lager]
- 1 pcs$1.78344
- 240 pcs$1.68674
- Delnummer:
- IPW65R190CFDAFKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 17.5A TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPW65R190CFDAFKSA1 electronic components. IPW65R190CFDAFKSA1 can be shipped within 24 hours after order. If you have any demands for IPW65R190CFDAFKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW65R190CFDAFKSA1 Produktegenskaper
Delnummer :
IPW65R190CFDAFKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 17.5A TO247
Serie :
Automotive, AEC-Q101, CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 700µA
Gate Lading (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1850pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
151W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO247-3
Pakke / sak :
TO-247-3
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