BSG0810NDIATMA1 Priser (USD) [83416stk Lager]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Delnummer:
- BSG0810NDIATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - RF, Transistorer - programmerbar enhet, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR-er - moduler, Dioder - Bridge likerettere, Tyristorer - DIAC, SIDAC and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Produktegenskaper
Delnummer :
BSG0810NDIATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 25V 19A/39A 8TISON
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual) Asymmetrical
FET-funksjon :
Logic Level Gate, 4.5V Drive
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
19A, 39A
Rds On (Max) @ Id, vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1040pF @ 12V
Kraft - Maks :
2.5W
Driftstemperatur :
-55°C ~ 155°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerTDFN
Leverandørenhetspakke :
PG-TISON-8
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