BSC072N03LDGATMA1 Priser (USD) [160653stk Lager]
- 1 pcs$0.23023
- Delnummer:
- BSC072N03LDGATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 30V 11.5A 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - FET, MOSFET - RF, Dioder - Bridge likerettere, Power Driver-moduler, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSC072N03LDGATMA1 electronic components. BSC072N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC072N03LDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC072N03LDGATMA1 Produktegenskaper
Delnummer :
BSC072N03LDGATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 30V 11.5A 8TDSON
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.5A
Rds On (Max) @ Id, vgs :
7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 15V
Kraft - Maks :
57W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-TDSON-8 Dual
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