BSM180D12P2C101 Priser (USD) [224stk Lager]
- 1 pcs$216.26708
- 10 pcs$208.25769
- Delnummer:
- BSM180D12P2C101
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET 2N-CH 1200V 180A MODULE.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - singel, Dioder - likerettere - singel, Transistorer - programmerbar enhet and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor BSM180D12P2C101 electronic components. BSM180D12P2C101 can be shipped within 24 hours after order. If you have any demands for BSM180D12P2C101, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180D12P2C101 Produktegenskaper
Delnummer :
BSM180D12P2C101
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET 2N-CH 1200V 180A MODULE
Serie :
-
Delstatus :
Active
FET Type :
2 N-Channel (Half Bridge)
FET-funksjon :
Silicon Carbide (SiC)
Drenering til kildespenning (Vdss) :
1200V (1.2kV)
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
204A (Tc)
Rds On (Max) @ Id, vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Gate Lading (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 10V
Kraft - Maks :
1130W
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
-
Pakke / sak :
Module
Leverandørenhetspakke :
Module
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