TK16E60W,S1VX Priser (USD) [23857stk Lager]
- 1 pcs$1.89942
- 50 pcs$1.52703
- Delnummer:
- TK16E60W,S1VX
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 15.8A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - programmerbar enhet, Dioder - Zener - Singel and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK16E60W,S1VX electronic components. TK16E60W,S1VX can be shipped within 24 hours after order. If you have any demands for TK16E60W,S1VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK16E60W,S1VX Produktegenskaper
Delnummer :
TK16E60W,S1VX
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 15.8A TO-220
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 790µA
Gate Lading (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
130W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220
Pakke / sak :
TO-220-3
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