IRFS4410PBF Priser (USD) [646stk Lager]
- 1 pcs$1.51601
- 10 pcs$1.35383
- 100 pcs$1.05332
- 500 pcs$0.85292
- 1,000 pcs$0.71934
- Delnummer:
- IRFS4410PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 88A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFS4410PBF electronic components. IRFS4410PBF can be shipped within 24 hours after order. If you have any demands for IRFS4410PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS4410PBF Produktegenskaper
Delnummer :
IRFS4410PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 88A D2PAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
10 mOhm @ 58A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5150pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
200W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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