IXFA7N60P3 Priser (USD) [25692stk Lager]
- 1 pcs$1.76280
- 10 pcs$1.57550
- 100 pcs$1.29191
- 500 pcs$0.99249
- 1,000 pcs$0.83704
- Delnummer:
- IXFA7N60P3
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 600V 7A TO-263AA.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Dioder - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in IXYS IXFA7N60P3 electronic components. IXFA7N60P3 can be shipped within 24 hours after order. If you have any demands for IXFA7N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA7N60P3 Produktegenskaper
Delnummer :
IXFA7N60P3
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 600V 7A TO-263AA
Serie :
HiPerFET™, Polar3™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.15 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
13.3nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
705pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
180W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (IXFA)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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