IPB180N04S4LH0ATMA1 Priser (USD) [50039stk Lager]
- 1 pcs$0.78140
- 1,000 pcs$0.66027
- Delnummer:
- IPB180N04S4LH0ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH TO263-7.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Dioder - Zener - Arrays, Dioder - likerettere - singel, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - Arrays, Tyristorer - DIAC, SIDAC, Tyristorer - SCR and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB180N04S4LH0ATMA1 electronic components. IPB180N04S4LH0ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N04S4LH0ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N04S4LH0ATMA1 Produktegenskaper
Delnummer :
IPB180N04S4LH0ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO263-7
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 180µA
Gate Lading (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (maks) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
24440pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-7-3
Pakke / sak :
TO-263-7, D²Pak (6 Leads + Tab)
Siste nytt
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