ZXMN2A02N8TA Priser (USD) [105782stk Lager]
- 1 pcs$0.37148
- 500 pcs$0.34965
- Delnummer:
- ZXMN2A02N8TA
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET N-CH 20V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Diodes Incorporated ZXMN2A02N8TA electronic components. ZXMN2A02N8TA can be shipped within 24 hours after order. If you have any demands for ZXMN2A02N8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2A02N8TA Produktegenskaper
Delnummer :
ZXMN2A02N8TA
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET N-CH 20V 8.3A 8-SOIC
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, vgs :
20 mOhm @ 11A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
18.9nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.56W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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