TSM2N7000KCT A3G Priser (USD) [1502592stk Lager]
- 1 pcs$0.02462
- Delnummer:
- TSM2N7000KCT A3G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 60V 300MA TO92.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - RF, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Tyristorer - TRIAC, Dioder - Bridge likerettere, Tyristorer - DIAC, SIDAC and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM2N7000KCT A3G electronic components. TSM2N7000KCT A3G can be shipped within 24 hours after order. If you have any demands for TSM2N7000KCT A3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM2N7000KCT A3G Produktegenskaper
Delnummer :
TSM2N7000KCT A3G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CHANNEL 60V 300MA TO92
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, vgs :
5 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7.32pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
400mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-92
Pakke / sak :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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