Vishay Siliconix - SI4943CDY-T1-GE3

KEY Part #: K6525171

SI4943CDY-T1-GE3 Priser (USD) [107279stk Lager]

1 pcs$0.34478
2,500 pcs$0.32302

Delnummer:: SI4943CDY-T1-GE3

Produsent:: Vishay Siliconix

Detaljert beskrivelse:: MOSFET 2P-CH 20V 8A 8-SOIC.

Manufacturer's standard lead time:: På lager

Holdbarhet:: Ett år

Brikke fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåte:

Familiekategorier:: KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - SCR, Transistorer - IGBT-er - singel, Tyristorer - TRIAC, Dioder - Zener - Singel, Tyristorer - DIAC, SIDAC, Dioder - likerettere - matriser and Transistorer - Bipolar (BJT) - Arrays ...

Konkurransefordel:: We specialize in Vishay Siliconix SI4943CDY-T1-GE3 electronic components. SI4943CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4943CDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

SI4943CDY-T1-GE3 Produktegenskaper

Delnummer : SI4943CDY-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2P-CH 20V 8A 8-SOIC

Serie : TrenchFET®

Delstatus : Active

FET Type : 2 P-Channel (Dual)

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 20V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 8A

Rds On (Max) @ Id, vgs : 19.2 mOhm @ 8.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1945pF @ 10V

Kraft - Maks : 3.1W

Driftstemperatur : -50°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-SOIC (0.154", 3.90mm Width)

Leverandørenhetspakke : 8-SO

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