IPD50R650CEATMA1 Priser (USD) [2739stk Lager]
- 2,500 pcs$0.11645
- Delnummer:
- IPD50R650CEATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N CH 500V 6.1A PG-TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - JFET-er, Dioder - RF, Tyristorer - SCR-er - moduler, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD50R650CEATMA1 electronic components. IPD50R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R650CEATMA1 Produktegenskaper
Delnummer :
IPD50R650CEATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N CH 500V 6.1A PG-TO252
Serie :
CoolMOS™ CE
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, vgs :
650 mOhm @ 1.8A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
342pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
69W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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