STU13N65M2 Priser (USD) [46527stk Lager]
- 1 pcs$0.79439
- 10 pcs$0.71871
- 100 pcs$0.57744
- 500 pcs$0.44911
- 1,000 pcs$0.37211
- Delnummer:
- STU13N65M2
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 650V 10A IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Singel, Power Driver-moduler, Tyristorer - TRIAC, Dioder - likerettere - singel, Tyristorer - SCR and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in STMicroelectronics STU13N65M2 electronic components. STU13N65M2 can be shipped within 24 hours after order. If you have any demands for STU13N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STU13N65M2 Produktegenskaper
Delnummer :
STU13N65M2
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 650V 10A IPAK
Serie :
MDmesh™ M2
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
430 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
IPAK (TO-251)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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