Delnummer :
TSM60NB1R4CH C5G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CHANNEL 600V 3A TO251
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.4 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
7.12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
257.3pF @ 100V
Effektdissipasjon (maks) :
28.4W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251 (IPAK)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA