TK12A80W,S4X Priser (USD) [29783stk Lager]
- 1 pcs$1.52041
- 50 pcs$1.22162
- 100 pcs$1.05595
- 500 pcs$0.85506
- 1,000 pcs$0.72114
- Delnummer:
- TK12A80W,S4X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 800V 11.5A TO220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - programmerbar enhet and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK12A80W,S4X electronic components. TK12A80W,S4X can be shipped within 24 hours after order. If you have any demands for TK12A80W,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12A80W,S4X Produktegenskaper
Delnummer :
TK12A80W,S4X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 800V 11.5A TO220SIS
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
450 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 570µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
45W (Tc)
Driftstemperatur :
150°C
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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