SQJB70EP-T1_GE3 Priser (USD) [225129stk Lager]
- 1 pcs$0.16429
- 3,000 pcs$0.14383
- Delnummer:
- SQJB70EP-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 100V POWERPAK SO8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Dioder - Bridge likerettere, Tyristorer - SCR, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - RF and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQJB70EP-T1_GE3 electronic components. SQJB70EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB70EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB70EP-T1_GE3 Produktegenskaper
Delnummer :
SQJB70EP-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 100V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.3A (Tc)
Rds On (Max) @ Id, vgs :
95 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 25V
Kraft - Maks :
27W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® SO-8 Dual
Leverandørenhetspakke :
PowerPAK® SO-8 Dual
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