VS-FB190SA10 Priser (USD) [3077stk Lager]
- 1 pcs$13.40790
- 10 pcs$12.36594
- 25 pcs$11.81026
- 100 pcs$10.55981
- 250 pcs$10.07348
- Delnummer:
- VS-FB190SA10
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- MOSFET N-CH 100V 190A SOT227.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - spesialformål, Transistorer - JFET-er, Power Driver-moduler, Transistorer - programmerbar enhet and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division VS-FB190SA10 electronic components. VS-FB190SA10 can be shipped within 24 hours after order. If you have any demands for VS-FB190SA10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-FB190SA10 Produktegenskaper
Delnummer :
VS-FB190SA10
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
MOSFET N-CH 100V 190A SOT227
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
190A
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
6.5 mOhm @ 180A, 10V
Vgs (th) (Max) @ Id :
4.35V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10700pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
568W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Leverandørenhetspakke :
SOT-227
Pakke / sak :
SOT-227-4, miniBLOC
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