Diodes Incorporated - ZXMN3G32DN8TA

KEY Part #: K6523078

ZXMN3G32DN8TA Priser (USD) [193225stk Lager]

  • 1 pcs$0.19142
  • 500 pcs$0.10528

Delnummer:
ZXMN3G32DN8TA
Produsent:
Diodes Incorporated
Detaljert beskrivelse:
MOSFET 2N-CH 30V 5.5A 8SOIC.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - Bridge likerettere, Transistorer - IGBT-er - moduler, Dioder - likerettere - singel, Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - RF and Transistorer - Bipolar (BJT) - RF ...
Konkurransefordel:
We specialize in Diodes Incorporated ZXMN3G32DN8TA electronic components. ZXMN3G32DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3G32DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3G32DN8TA Produktegenskaper

Delnummer : ZXMN3G32DN8TA
Produsent : Diodes Incorporated
Beskrivelse : MOSFET 2N-CH 30V 5.5A 8SOIC
Serie : -
Delstatus : Active
FET Type : 2 N-Channel (Dual)
FET-funksjon : Logic Level Gate
Drenering til kildespenning (Vdss) : 30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 5.5A
Rds On (Max) @ Id, vgs : 28 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 472pF @ 15V
Kraft - Maks : 1.8W
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : 8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke : 8-SO

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