IPU80R900P7AKMA1 Priser (USD) [61934stk Lager]
- 1 pcs$0.65642
- 10 pcs$0.58283
- 100 pcs$0.46075
- 500 pcs$0.33799
- 1,000 pcs$0.26684
- Delnummer:
- IPU80R900P7AKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V 6A TO251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPU80R900P7AKMA1 electronic components. IPU80R900P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R900P7AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R900P7AKMA1 Produktegenskaper
Delnummer :
IPU80R900P7AKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 6A TO251-3
Serie :
CoolMOS™ P7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 110µA
Gate Lading (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 500V
FET-funksjon :
-
Effektdissipasjon (maks) :
45W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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