SQJB80EP-T1_GE3 Priser (USD) [164478stk Lager]
- 1 pcs$0.22488
- 3,000 pcs$0.19003
- Delnummer:
- SQJB80EP-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 80V POWERPAK SO8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Dioder - Zener - Arrays, Transistorer - JFET-er and Dioder - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQJB80EP-T1_GE3 electronic components. SQJB80EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB80EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB80EP-T1_GE3 Produktegenskaper
Delnummer :
SQJB80EP-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 80V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Rds On (Max) @ Id, vgs :
19 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Kraft - Maks :
48W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® SO-8 Dual
Leverandørenhetspakke :
PowerPAK® SO-8 Dual
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