TK31J60W5,S1VQ Priser (USD) [12995stk Lager]
- 1 pcs$3.50567
- 25 pcs$3.48823
- Delnummer:
- TK31J60W5,S1VQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 600V 30.8A TO-3PN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Dioder - likerettere - singel and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK31J60W5,S1VQ electronic components. TK31J60W5,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W5,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31J60W5,S1VQ Produktegenskaper
Delnummer :
TK31J60W5,S1VQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 600V 30.8A TO-3PN
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Gate Lading (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
230W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-3P(N)
Pakke / sak :
TO-3P-3, SC-65-3
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