BSZ15DC02KDHXTMA1 Priser (USD) [213080stk Lager]
- 1 pcs$0.17445
- 5,000 pcs$0.17358
- Delnummer:
- BSZ15DC02KDHXTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N/P-CH 20V 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Tyristorer - TRIAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSZ15DC02KDHXTMA1 electronic components. BSZ15DC02KDHXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ15DC02KDHXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ15DC02KDHXTMA1 Produktegenskaper
Delnummer :
BSZ15DC02KDHXTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N/P-CH 20V 8TDSON
Serie :
Automotive, AEC-Q101, HEXFET®
Delstatus :
Active
FET Type :
N and P-Channel Complementary
FET-funksjon :
Logic Level Gate, 2.5V Drive
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.1A, 3.2A
Rds On (Max) @ Id, vgs :
55 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 110µA
Gate Lading (Qg) (Max) @ Vgs :
2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
419pF @ 10V
Kraft - Maks :
2.5W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerTDFN
Leverandørenhetspakke :
PG-TSDSON-8-FL
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